Home > SiC Epitaxial Wafer >

350um 4H SiC substrate

Product Categories

Shanghai GaNova Electronic Information Co., Ltd.

Contact Now

350um 4H SiC substrate

Name: 350um 4H SiC substrate
Brand: GaNova
Price: 1 USD

Brand Name : GaNova

Certification : UKAS/ISO9001:2015

Place of Origin : Suzhou China

Payment Terms : T/T

Delivery Time : 3-4 week days

Packaging Details : Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.

Crystal Form : 4H

Surface Metal Contamination : (Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2

Product Name : SiC Epitaxial Wafer

Diameter : 150.0mm +0mm/-0.2mm

Surface Orientation : Off-Axis:4°toward <11-20>±0.5 °

Primary Flat Length : 47.5mm ± 1.5mm

Secondary Flat Length : No Secondary Flat

Primary Flat Orientation : Parallel to<11-20>±1°

Orthogonal Misorientation : ±5.0°

Contact Now

6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm² Resistivity 0.015Ω•Cm—0.025Ω•Cm For Power And Microw

6inch 4H-SiC substrate N-Type

Overview

Silicon carbide (SiC) is a non-oxide ceramic engineering material that has gathered a considerable amount of interest. The SiC particles pose a relatively low thermal expansion, high thermal conductivity, high hardness, and resistance to abrasion and corrosion.

Property	P-MOS Grade	P-SBD Grade	D Grade
Crystal Form	4H
Polytype	None Permitted		Area≤5%
(MPD) ^a	≤0.2 /cm²	≤0.5 /cm²	≤5 /cm²
Hex Plates	None Permitted		Area≤5%
Hexagonal Polycrystal	None Permitted
Inclusions ^a	Area≤0.05%	Area≤0.05%	N/A
Resistivity	0.015Ω•cm—0.025Ω•cm	0.015Ω•cm—0.025Ω•cm	0.014Ω•cm—0.028Ω•cm
(EPD)^a	≤4000/cm²	≤8000/cm²	N/A
(TED)^a	≤3000/cm²	≤6000/cm²	N/A
(BPD)^a	≤1000/cm²	≤2000/cm²	N/A
(TSD)^a	≤600/cm²	≤1000/cm²	N/A
Stacking Fault	≤0.5% Area	≤1% Area	N/A
Surface Metal Contamination	(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm^-2
Diameter	150.0 mm +0mm/-0.2mm
Surface Orientation	Off-Axis:4°toward <11-20>±0.5 °
Primary Flat Length	47.5 mm ± 1.5 mm
Secondary Flat Length	No Secondary Flat
Primary Flat Orientation	Parallel to<11-20>±1°
Secondary Flat Orientation	N/A
Orthogonal Misorientation	±5.0°
Surface Finish	C-Face:Optical Polish,Si-Face:CMP
Wafer Edge	Beveling
Surface Roughness (10μm×10μm)	Si Face Ra≤0.20 nm ； C Face Ra≤0.50 nm
Thickness ^a	350.0μm± 25.0 μm
LTV(10mm×10mm)^a	≤2μm		≤3μm
(TTV)^a	≤6μm		≤10μm
(BOW) ^a	≤15μm	≤25μm	≤40μm
(Warp) ^a	≤25μm	≤40μm	≤60μm
Chips/Indents	None Permitted ≥0.5mm Width and Depth		Qty.2 ≤1.0 mm Width and Depth
Scratches ^a (Si Face,CS8520)	≤5 and Cumulative Length≤0.5×Wafer Diameter		≤5 and Cumulative Length≤1.5×Wafer Diameter
TUA(2mm*2mm)	≥98%	≥95%	N/A
Cracks	None Permitted
Contamination	None Permitted
Property	P-MOS Grade	P-SBD Grade	D Grade
Edge Exclusion	3mm

Remark: 3mm edge exclusion is used for the items marked with ^a.

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product Tags: