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350um 4H SiC substrate

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Shanghai GaNova Electronic Information Co., Ltd.

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350um 4H SiC substrate

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350um 4H SiC substrate

6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•Cm—0.025Ω•Cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Silicon carbide (SiC) is a non-oxide ...

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350um 4H SiC substrate

Microw Epitaxial Wafer

4H SiC substrate N Type

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