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4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

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4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

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4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

JDCD03-001-004 SiC Epitaxial Wafer Wafer Edge Beveling 350.0μm± 25.0 μm JDCD03-001-004 Overview Several methods of growing the epitaxial layer on existing silicon or other wafers are currently used: ...

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4H Crystal SiC Epitaxial Wafer

4H epi wafer

SiC Epitaxial Wafer 47.5 mm

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