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6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um

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Shanghai GaNova Electronic Information Co., Ltd.

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6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um

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6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um

6inch 4H-SiC substrate N-Type P-MOS Grade 350.0±25.0μm MPD≤0.2/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and ...

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6inch N Type Wafer

4H SiC Substrate

N Type Wafer P MOS Grade

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