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Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um

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Shanghai GaNova Electronic Information Co., Ltd.

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Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um

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Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um

2-inch Free-standing U-GaN/SI-GaN Substrates 50.8 ± 1 mm 350 ± 25 μm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview ...

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Free Standing GaN Epitaxial Wafer

U-GaN SI-GaN Substrates

50.8mm GaN Epitaxial Wafer

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