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6inch 4H SiC Substrate N Type P SBD Grade 350μm

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Shanghai GaNova Electronic Information Co., Ltd.

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6inch 4H SiC Substrate N Type P SBD Grade 350μm

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6inch 4H SiC Substrate N Type P SBD Grade 350μm

6inch 4H-SiC substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC boules (crystals) are grown, machined into ingots, and ...

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6inch 4H SiC Substrate

350um silicon carbide epitaxy

4H SiC Substrate N Type

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