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Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um

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Shanghai GaNova Electronic Information Co., Ltd.

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Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um

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Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um

2-Inch Free-Standing N-GaN Substrates N Face Surface Roughness 0.5 ~1.5 μm (Single Side Polished) 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power ...

Product Tags:

Freestanding GaN Substrates

Single Side Polished Epitaxial Wafer

N GaN Substrates

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